NTD4810NH
TYPICAL PERFORMANCE CURVES
60
50
40
5V
10 V
8V
6V
T J = 25 ° C
4.5 V
4.2 V
4V
70
60
50
V DS ≥ 10 V
30
3.8 V
40
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
3.5 V
3.2 V
3V
5.5
6
30
20
10
0
1
2
T J = 125 ° C
T J = 25 ° C
3
T J = --55 ° C
4
5
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.025
0.023
0.021
0.019
I D = 30 A
T J = 25 ° C
0.025
0.020
T J = 25 ° C
V GS = 4.5 V
0.017
0.015
0.013
0.015
0.010
0.011
0.009
0.005
V GS = 11.5 V
0.007
4
5
6
7
8
9
10
11
0
15
20
25
30
35
40
45
50
55
V GS , GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
2.0
1.5
I D = 30 A
V GS = 10 V
100,000
10,000
V GS = 0 V
T J = 150 ° C
1.0
1000
0.5
100
T J = 125 ° C
0
--50 --25
0
25
50
75
100
125
150
175
10
4
8
12
16
20
24
28
32
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On--Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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相关代理商/技术参数
NTD4810NT4G 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK
NTD4813N-1G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813N-35G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NH 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK
NTD4813NH-1G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NH-35G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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